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International Rectifier Electronic Components Datasheet

IRF8313PBF Datasheet

Power MOSFET

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PD - 97145
IRF8313PbF
Applications
l Load Switch
l DC/DC Conversion
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
Description
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 15.5m:@VGS = 10V 6.0nC
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
Typ.
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Max.
42
62.5
Units
V
A
W
W/°C
°C
Units
°C/W
1
11/5/08


International Rectifier Electronic Components Datasheet

IRF8313PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRF8313PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
12.5
18.6
1.80
-6.0
–––
–––
–––
–––
–––
6.0
1.5
0.9
2.2
1.4
2.9
3.8
2.2
8.3
9.9
8.5
4.2
760
172
87
–––
–––
15.5
21.6
2.35
–––
1.0
150
100
-100
–––
9.0
–––
–––
–––
–––
–––
–––
3.6
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 9.7A
VGS = 4.5V, ID = 8.0A
V VDS = VGS, ID = 25μA
mV/°C
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 8.0A
VDS = 15V
nC VGS = 4.5V
ID = 8.0A
See Figs. 17a & 17b
nC VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns
ID = 8.0A
RG = 1.8Ω
See Fig. 15a & 15b
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
46
8.0
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
A MOSFET symbol
(Body Diode)
showing the
D
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
––– ––– 82
––– ––– 1.0
––– 20 30
––– 10 15
A integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 8.0A, VGS = 0V
ns TJ = 25°C, IF = 8.0A, VDD = 15V
enC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number IRF8313PBF
Description Power MOSFET
Maker International Rectifier
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IRF8313PBF Datasheet PDF






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