Datasheet4U Logo Datasheet4U.com

IRF9130 Datasheet - International Rectifier

P-Channel Power MOSFET

IRF9130 Features

* Repetitive Avalanche Ratings

* Dynamic dv/dt Rating

* Hermetically Sealed

* Simple Drive Requirements

* ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 1

IRF9130 General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.

IRF9130 Datasheet (828.17 KB)

Preview of IRF9130 PDF

Datasheet Details

Part number:

IRF9130

Manufacturer:

International Rectifier

File Size:

828.17 KB

Description:

P-channel power mosfet.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF9130 -100V RDS(on)  ID -.

📁 Related Datasheet

IRF9130 P-Channel Power MOSFET (Samsung semiconductor)

IRF9130 P-Channel Power MOSFET (Seme LAB)

IRF9130 P-Channel Power MOSFET (Intersil Corporation)

IRF9130SMD P-Channel Power MOSFET (Seme LAB)

IRF9131 P-Channel Power MOSFET (Samsung semiconductor)

IRF9132 P-Channel Power MOSFET (Samsung semiconductor)

IRF9133 P-Channel Power MOSFET (Samsung semiconductor)

IRF9140 P-Channel Power MOSFET (Seme LAB)

IRF9140 P-Channel Power MOSFET (Intersil Corporation)

IRF9140 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

TAGS

IRF9130 P-Channel Power MOSFET International Rectifier

Image Gallery

IRF9130 Datasheet Preview Page 2 IRF9130 Datasheet Preview Page 3

IRF9130 Distributor