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IRFH7545PBF - Power MOSFET

Features

  • rrent vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 Avalanche Current (A) EAR , Avalanche Energy (mJ) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 15. Avalanche Current vs. Pulse Width 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle 100 ID = 51A 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C.

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Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters   Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRFH7545PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 60V 4.3m 5.
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