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International Rectifier Electronic Components Datasheet

IRFH7545PBF Datasheet

Power MOSFET

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Application
 Brushed Motor drive applications
 BLDC Motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
 
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
StrongIRFET™
IRFH7545PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
4.3m
5.2m
85A
 
PQFN 5 x 6 mm
Base part number Package Type
IRFH7545PbF PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7545TRPbF
20
ID = 51A
15
10
TJ = 125°C
5
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 7, 2014


International Rectifier Electronic Components Datasheet

IRFH7545PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH7545PbF
Absolute Maximum Rating
Symbol
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
EAS (Thermally limited)
IAR
EAR
Thermal Resistance  
Single Pulse Avalanche Energy 
Avalanche Current
Repetitive Avalanche Energy
Symbol
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.1
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG Gate Resistance
–––
Max.
85
54
340
83
0.67
± 20
-55 to + 150  
Units
A
W
W/°C
V
°C  
102
160
See Fig 15, 16, 23a, 23b
mJ
A
mJ
Typ.
–––
–––
–––
–––
Max.
Units
1.5
22 °C/W
34  
23  
Typ.
–––
49
4.3
6.0
–––
–––
–––
–––
–––
2.5
Max.
–––
–––
5.2
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
V
µA
nA
VGS = 10V, ID = 51A
VGS = 6.0V, ID = 26A
VDS = VGS, ID = 100µA
VDS =60 V, VGS = 0V
VDS =60V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 78µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 1212A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 7, 2014


Part Number IRFH7545PBF
Description Power MOSFET
Maker International Rectifier
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