IRFI1310G Datasheet - International Rectifier

Power MOSFET

IRFI1310G Features

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IRFI1310G General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de.

IRFI1310G Datasheet (361.48 KB)

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IRFI1310G

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International Rectifier

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361.48 KB

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Power mosfet.
Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated P.

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IRFI1310G Power MOSFET International Rectifier

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IRFI1310G Features

IRFI1310G General Description

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