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International Rectifier Electronic Components Datasheet

IRFI1310G Datasheet

Power MOSFET

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HEXFET® Power MOSFET
PD - 9.1222
IRFI1310G
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04
ID = 22A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Collector Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
22
15
88
48
0.32
±20
120
22
4.8
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
––––
Typ.
––––
––––
Max.
3.1
––––
Units
°C/W
65
To Order
Revision 0


International Rectifier Electronic Components Datasheet

IRFI1310G Datasheet

Power MOSFET

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IRFI1310G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.04 VGS = 10V, ID = 13A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
12 ––– ––– S VDS = 50V, ID = 25A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 110
ID = 25A
––– ––– 18 nC VDS = 80V
––– ––– 42
VGS = 10V, See Fig. 6 and 13
––– 13 –––
VDD = 50V
––– 77 ––– ns ID = 25A
––– 82 –––
RG = 9.1
––– 64 –––
RD = 2.0Ω, See Fig. 10
Between lead,
––– 4.5 –––
nH 6mm (0.25in.)
from package
––– 7.5 –––
and center of die contact
––– 2500 –––
VGS = 0V
––– 630 ––– pF VDS = 25V
––– 130 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 22
showing the
A
integral reverse
––– ––– 88
p-n junction diode.
––– ––– 2.5
––– 140 210
––– 0.79 1.2
V TJ = 25°C, IS = 13A, VGS = 0V
ns TJ = 25°C, IF = 25A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25, IAS = 13A. (See Figure 12)
ISD 25A, di/dt 170A/µs, VDD V(BR)DSS,
TJ 175°C
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
To Order


Part Number IRFI1310G
Description Power MOSFET
Maker International Rectifier
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IRFI1310G Datasheet PDF





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