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IRFP250MPBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

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Full PDF Text Transcription for IRFP250MPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFP250MPBF. For precise diagrams, and layout, please refer to the original PDF.

PD - 96292 l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Driv...

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Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free IRFP250MPbF HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.075Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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