Key Features
- Static drain-source on-resistance: RDS(on)≤75mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRFP250MPBF
|
International Rectifier |
Power MOSFET |
|
IRFP250MPbF
|
Infineon |
MOSFET |
|
IRFP250NPBF
|
IRF |
Power MOSFET |
|
IRFP250
|
STMicroelectronics |
N-CHANNEL MOSFET |
|
IRFP250B
|
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
IRFP250
|
IXYS |
Power MOSFET |
|
IRFP250A
|
Fairchild Semiconductor |
Advanced Power MOSFET |
|
IRFP254N
|
IRF |
Power MOSFET |
|
IRFP254
|
IXYS |
Standard Power MOSFET |
|
IRFP253
|
International Rectifier |
N-Channel Transistor |