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IRFU3411PBF - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU3411PBF, a member of the IRFR3411PBF HEXFET Power MOSFET family.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • INT.

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Full PDF Text Transcription

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PD - 95371A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFR3411PbF IRFU3411PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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