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International Rectifier Electronic Components Datasheet

IRG4BC40K Datasheet

HEXFET Power MOSFET

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PD - 91592B
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
Industry standard TO-247AC package
IRG4BC40K
Short Circuit Rated
UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 25A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.50
–––
2 (0.07)
Max.
0.77
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000


International Rectifier Electronic Components Datasheet

IRG4BC40K Datasheet

HEXFET Power MOSFET

No Preview Available !

IRG4BC40K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
7.0
Typ. Max.
——
——
0.46
2.10 2.6
2.70
2.14
6.0
-13
14
250
2.0
2000
±100
Units
V
V
V/°C
V
mV/°C
S
µA
nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 25A
VGE = 15V
IC = 42A
See Fig.2, 5
IC = 25A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100 V, IC = 25A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
120 180
IC = 25A
16 24 nC VCC = 400V
51 77
VGE = 15V
30
See Fig.8
15 ns TJ = 25°C
140 210
IC = 25A, VCC = 480V
140 210
VGE = 15V, RG = 10
0.62
Energy losses include "tail"
0.33 mJ See Fig. 9,10,14
0.95 1.4
10 — —
30
18
190
150
µs VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
IC = 25A, VCC = 480V
ns VGE = 15V, RG = 10
Energy losses include "tail"
1.9 mJ See Fig. 11,14
13 nH Measured 5mm from package
1600
130
55
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number IRG4BC40K
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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