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IRG4BC40K - HEXFET Power MOSFET

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Overview

PD - 91592B IRG4BC40K INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

  • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides higher efficiency than Generation 3.
  • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified applicatio.

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