IRG4BC40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
— 1.32 1.5
IC = 31A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 1.68 — V IC = 60A
See Fig.2, 5
— 1.32 —
IC = 31A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
— -9.3 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
12 21 — S VCE = 100V, IC = 31A
ICES
Zero Gate Voltage Collector Current
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 100 150
IC = 31A
— 14 21
— 34 51
nC VCC = 400V
VGE = 15V
See Fig. 8
— 22 —
— 18 — ns TJ = 25°C
— 650 980
IC = 31A, VCC = 480V
— 380 570
VGE = 15V, RG = 10Ω
— 0.45 —
Energy losses include "tail"
— 6.5 — mJ See Fig. 10, 11, 13, 14
— 6.95 9.9
— 23 —
TJ = 150°C,
— 21 —
— 1000 —
ns IC = 31A, VCC = 480V
VGE = 15V, RG = 10Ω
— 940 —
Energy losses include "tail"
— 12 — mJ See Fig. 13, 14
— 7.5 — nH Measured 5mm from package
— 2200 —
VGE = 0V
— 140 —
— 26 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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