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IRG4BC40U Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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IRG4BC40U hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4BC40U
Manufacturer	International Rectifier (now Infineon)
File Size	173.64 KB
Description	HEXFET Power MOSFET
Datasheet	IRG4BC40U Datasheet

Overview

PD - 91456E IRG4BC40U INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40F	HEXFET Power MOSFET
IRG4BC40FPBF	HEXFET Power MOSFET
IRG4BC40K	HEXFET Power MOSFET
IRG4BC40KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40S	HEXFET Power MOSFET
IRG4BC40SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40W	HEXFET Power MOSFET
IRG4BC40WL	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WLPBF	INSULATED GATE BIPOLAR TRANSISTOR