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International Rectifier Electronic Components Datasheet

IRG4BC40U Datasheet

HEXFET Power MOSFET

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PD - 91456E
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
40
20
160
160
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Min.
------
------
------
------
Typ.
------
0.50
------
2 (0.07)
Max.
0.77
------
80
------
Units
°C/W
g (oz)
1
4/17/2000


International Rectifier Electronic Components Datasheet

IRG4BC40U Datasheet

HEXFET Power MOSFET

No Preview Available !

IRG4BC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance U 11
----
ICES Zero Gate Voltage Collector Current ----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
---- ---- V
0.63 ---- V/°C
1.72 2.1
2.15 ---- V
1.7 ----
---- 6.0
-13 ---- mV/°C
18 ---- S
---- 250
---- 2.0 µA
---- 2500
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A See Fig. 2, 5
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 40A
IC = 20A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 20A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 100 150
IC = 20A
---- 16 25
---- 40 60
nC VCC = 400V
VGE = 15V
See Fig. 8
---- 34 ----
---- 19 ----
---- 110 175
---- 120 180
TJ = 25°C
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
---- 0.32 ----
---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
---- 0.67 1.0
---- 30 ----
TJ = 150°C,
---- 19 ----
---- 220 ----
ns IC = 20A, VCC = 480V
VGE = 15V, RG = 10
---- 160 ----
Energy losses include "tail"
---- 1.4 ---- mJ See Fig. 13, 14
---- 7.5 ---- nH Measured 5mm from package
---- 2100 ----
VGE = 0V
---- 140 ----
---- 34 ----
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10,
(see fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number IRG4BC40U
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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