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International Rectifier Electronic Components Datasheet

IRG4IBC20KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -94916
IRG4IBC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
UltraFast IGBT
Features
• High switching speed optimized for up to 25kHz
with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220 FULLPAK
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 6.3A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
• IGBTs optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
equivalent industry-standard IGBTs
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
600
11.5
6.3
23
24
6.3
24
10
2500
± 20
34
14
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.5
65
–––
Units
°C/W
g (oz)
www.irf.com
1
12/30/03


International Rectifier Electronic Components Datasheet

IRG4IBC20KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4IBC20KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.49 — V/°C VGE = 0V, IC = 1.0mA
— 2.27 2.8
IC = 9.0A
VGE = 15V
— 3.01 — V IC = 16A
See Fig. 2, 5
— 2.43 —
IC = 9.0A, TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 250µA
2.9 4.3 — S VCE = 100V, IC = 9.0A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.4 1.7 V IC = 8.0A
See Fig. 13
— 1.3 1.6
IC = 8.0A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
10
Typ.
34
4.9
14
54
34
180
72
0.34
0.30
0.64
51
37
220
160
0.85
7.5
450
61
14
37
55
3.5
4.5
65
124
240
210
Max.
51
7.4
21
270
110
0.96
55
90
5.0
8.0
138
360
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 9.0A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50, VCPK < 500V
TJ = 150°C,
See Fig. 10,11,14
IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200Aµs
TJ = 25°C See Fig.
TJ = 125°C 17
2 www.irf.com


Part Number IRG4IBC20KDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 10 Pages
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