IRG4IBC20KDPBF Datasheet | International Rectifier

Features Short Circuit Rated Ultra Fast IGBT VCES = 600V - High switching speed optimized for up to 25k Hz with low VCE(on) - Short Circuit Rating 10µs @ 125°C, VGE = 15V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-220 FULLPAK - Lead-Free VCE(on) typ. = 2.27V @VGE = 15V, IC = 6.3A n-channel Benefits - Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the system - IGBTs optimized for specific application conditions - HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise EMI - Designed to exceed the power handling capability of equivalent industry-standard IGBTs TO-220 FULLP AK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 11.5 6.3 23 24 6.3 24 10 2500 ± 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units µs V W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. - - - - - - - - - 2.0...