IRG4IBC20KDPBF Description
PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4IBC20KDPBF Key Features
- High switching speed optimized for up to 25kHz with low VCE(on)
- Short Circuit Rating 10µs @ 125°C, VGE = 15V
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220 FULLPAK
- Lead-Free
- Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the system
- IGBTs optimized for specific application conditions
- HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise EMI
- Designed to exceed the power handling capability of equivalent industry-standard IGBTs