Part IRG4IBC20W
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 154.11 KB
International Rectifier

IRG4IBC20W Overview

Key Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
  • 2.5kV, 60s insulation voltage V
  • Industry-benchmark switching losses improve efficiency of all power supply topologies
  • 50% reduction of Eoff parameter
  • Low IGBT conduction losses
  • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
  • Industry standard Isolated TO-220 FullpakTM outline C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A n-channel Benefits
  • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
  • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher