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IRG4IBC20W - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.