IRG4IBC20FDPBF Overview
PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG4IBC20FDPBF Key Features
- Very Low 1.66V votage drop
- 2.5kV, 60s insulation voltage
- 4.8 mm creapage distance to heatsink
- Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
- IGBT co-packaged with HEXFREDTM ultrafast
- Tighter parameter distribution
- Industry standard Isolated TO-220 FullpakTM
- Lead-Free
- Simplified assembly
- Highest efficiency and power density