Part IRG4IBC20FDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 292.27 KB
International Rectifier

IRG4IBC20FDPBF Overview

Key Features

  • Very Low 1.66V votage drop
  • 2.5kV, 60s insulation voltage
  • 4.8 mm creapage distance to heatsink
  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 G kHz in resonant mode)
  • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes E n-channel
  • Tighter parameter distribution
  • Industry standard Isolated TO-220 FullpakTM outline
  • Lead-Free Fast CoPack IGBT VCES = 600V VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A Benefits
  • Simplified assembly
  • Highest efficiency and power density