IRG4IBC20KDPBF
IRG4IBC20KDPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
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PD -94916
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short Circuit Rated UltraFast IGBT
VCES = 600V
- High switching speed optimized for up to 25kHz with low VCE(on)
- Short Circuit Rating 10µs @ 125°C, VGE = 15V
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220 FULLPAK
- Lead-Free
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 6.3A n-channel
Benefits
- Generation 4 IGBTs offer highest efficiencies available...
