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IRG4IBC20UDPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY.

IRG4IBC20UDPBF datasheet preview

Datasheet Details

Part number	IRG4IBC20UDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	303.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4IBC20UDPBF-InternationalRectifier.pdf

Key Features

C.
2.5kV, 60s insulation voltage .
4.8 mm creapage distance to heatsink VCES = 600V.
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
IGBT co-packaged with.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4IBC20UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20FDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC20KDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20W	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20WPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC10UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30FD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30KDPBF	INSULATED GATE BIPOLAR TRANSISTOR

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