Datasheet Summary
PD -94917A
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
- 2.5kV, 60s insulation voltage
- 4.8 mm creapage distance to heatsink
VCES = 600V
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
- Tighter parameter distribution
- Industry standard Isolated TO-220 FullpakTM
E n-channel
VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A outline
- Lead-Free
Benefits
- Simplified assembly
- Highest efficiency and power density
- HEXFREDTM antiparallel Diode minimizes switching...