IRG4IBC20UDPBF transistor equivalent, insulated gate bipolar transistor.
C
* 2.5kV, 60s insulation voltage
* 4.8 mm creapage distance to heatsink
VCES = 600V
* UltraFast: Optimized for high operating frequencies 8-40 kHz in h.
n), tr
8
Ic
tx 10% Vcc
Vpk Irr
trr
trr
∫Qrr = id dt tx
10% Irr
Vcc
DIODE RECOVERY WAVEFORMS
DIODE REVERSE RECOVER.
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