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PD -94917A
IRG4IBC20UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
VCES = 600V
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
• Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM
G
E
n-channel
VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.
IRG4IBC20UDPBF Datasheet
