Part IRG4IBC20UDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 303.36 KB
International Rectifier

IRG4IBC20UDPBF Overview

Key Features

  • 2.5kV, 60s insulation voltage
  • 4.8 mm creapage distance to heatsink VCES = 600V
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
  • Tighter parameter distribution
  • Industry standard Isolated TO-220 FullpakTM G E n-channel VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A outline
  • Lead-Free Benefits
  • Simplified assembly
  • Highest efficiency and power density
  • HEXFREDTM antiparallel Diode minimizes switching losses and EMI