IRG4IBC20UDPBF Description
PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE.
IRG4IBC20UDPBF Key Features
- 2.5kV, 60s insulation voltage
- 4.8 mm creapage distance to heatsink
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
- Tighter parameter distribution
- Industry standard Isolated TO-220 FullpakTM
- Lead-Free
- Simplified assembly
- Highest efficiency and power density
- HEXFREDTM antiparallel Diode minimizes