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International Rectifier Electronic Components Datasheet

IRG4IBC20W Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD 91785A
IRG4IBC20W
INSULATED GATE BIPOLAR TRANSISTOR
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
2.5kV, 60s insulation voltage V
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Industry standard Isolated TO-220 FullpakTM
outline
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.16V
@VGE = 15V, IC = 6.5A
TO-220 FULLPAK
Max.
600
11.8
6.2
52
52
± 20
200
34
14
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.0 (0.07)
Max.
3.7
65
–––
Units
°C/W
g (oz)
www.irf.com
1
12/30/00


International Rectifier Electronic Components Datasheet

IRG4IBC20W Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4IBC20W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
600
18
0.48
2.16
2.6
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
2.55 V IC = 13A
See Fig.2, 5
2.05
IC = 6.5A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-8.8 mV/°C VCE = VGE, IC = 250µA
5.5 8.3 S VCE = 100 V, IC = 6.5A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
26 38
IC = 6.5A
3.7 5.5 nC VCC = 400V
See Fig.8
10 15
VGE = 15V
22
14 ns TJ = 25°C
110 160
IC = 6.5A, VCC = 480V
64 96
VGE = 15V, RG = 50
0.06
Energy losses include "tail"
0.08 mJ See Fig. 9, 10, 14
0.14 0.2
21
TJ = 150°C,
15
150
ns IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
150
Energy losses include "tail"
0.34 mJ See Fig. 10, 11, 14
7.5 nH Measured 5mm from package
490
VGE = 0V
38 pF VCC = 30V
See Fig. 7
8.8
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
Vt = 60s, f = 60Hz
2 www.irf.com


Part Number IRG4IBC20W
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 8 Pages
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