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IRG4PC30KDPBF - INSULATED GATE BIPOALR TRANSISTOR

Key Features

  • VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel • Latest generation 4 IGBTs offer highest power density motor controls possible •.

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Full PDF Text Transcription for IRG4PC30KDPBF (Reference)

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PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V • Co...

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µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free Short Circuit Rated UltraFast IGBT C • High short circuit rating optimized for motor control, Features VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.

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