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International Rectifier Electronic Components Datasheet

IRG4PC30S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 91586A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30S
Standard Speed IGBT
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
34
18
68
68
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000


International Rectifier Electronic Components Datasheet

IRG4PC30S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PC30S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
6.0
Typ. Max. Units
Conditions
——
——
0.75
1.40 1.6
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 18A
VGE = 15V
1.84 V IC = 34A
See Fig.2, 5
1.45
IC = 18A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
11 S VCE = 100V, IC = 18A
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
50 75
7.3 11
17 26
22
18
540 810
390 590
0.26
3.45
3.71 5.6
21
19
790
760
6.55
13
1100
72
13
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 18A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 18A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com


Part Number IRG4PC30S
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 8 Pages
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