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IRG4PC30S - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PC30S insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PC30S
Manufacturer	International Rectifier (now Infineon)
File Size	121.32 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC30S Datasheet

Overview

PD - 91586A IRG4PC30S INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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