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IRG4PSH71K - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRG4PSH71K insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4PSH71K
Manufacturer	International Rectifier (now Infineon)
File Size	150.57 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PSH71K Datasheet

Overview

PD - 91687A PRELIMINARY IRG4PSH71K Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR.

Key Features

Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins.
High short circuit rating IGBTs, optimized for motorcontrol.
Minimum switching losses combined with low conduction losses.
Tightest parameter distribution.
Creepage distance increased to 5.35mm VCES = 1200V G E VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A n-channel Benefits.
Highest current rating IGBT.
Maximum power density, twice the po.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4PSH71KD	INSULATED GATE BIPOLAR TRANSISTOR
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IRG4PSH71U	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSH71UD	UltraFast Copack IGBT
IRG4PSH71UDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71KDPBF	INSUKATED GATEBIPOLAR TRANSISTOR
IRG4PSC71U	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71UD	INSULATED GATE BIPOLAR TRANSISTOR