IRG4PSH71UDPBF Datasheet | International Rectifier

Features - Ultra Fast switching speed optimized for operating frequencies 8 to 40k Hz in hard switching, 200k Hz in resonant mode soft switching VCES = 1200V - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than VCE(on) typ. = 2.52V prior generations - Industry-benchmark Super-247 package with higher power handling capability pared to E n-channel @VGE = 15V, IC = 50A same footprint TO-247 - Creepage distance increased to 5.35mm - Lead-Free Benefits - Generation 4 IGBT's offer highest efficiencies available - Maximum power density, twice the power handling of the TO-247, less space than TO-264 - IGBTs optimized for specific application conditions - Cost and space saving in designs that require SUPER - 247 multiple, paralleled IGBTs - HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings Parameter Max. Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE IF @ Tc = 100°C IFM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current ÙPulse Collector Current d Clamped Inductive Load current Gate-to-Emitter Voltage Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 1200 99 50 200 200 ±20 70 200 350 140 -55 to +150 V W °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface RθJA Junction-to-Ambient, typical socket mount Remended Clip...