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IRG4PSH71UDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching C VCES = 1200V.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than G VCE(on) typ. = 2.52V prior generations.
  • Industry-benchmark Super-247 package with higher power handling capability compared to E n-channel @VGE = 15V, IC = 50A same footprint TO-24.

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Full PDF Text Transcription

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PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching C VCES = 1200V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than G VCE(on) typ. = 2.52V prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to E n-channel @VGE = 15V, IC = 50A same footprint TO-247 • Creepage distance increased to 5.
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