IRG4PSH71UD Datasheet | International Rectifier

Features - Ultra Fast switching speed optimized for operating frequencies 8 to 40k Hz in hard switching, 200k Hz in resonant mode soft switching - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations - Industry-benchmark Super-247 package with higher power handling capability pared to same footprint TO-247 - Creepage distance increased to 5.35mm Benefits - Generation 4 IGBT's offer highest efficiencies available - Maximum power density, twice the power handling of the TO-247, less space than TO-264 - IGBTs optimized for specific application conditions - Cost and space saving in designs that require multiple, paralleled IGBTs - HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings G E n-channel VCES = 1200V VCE(on) typ. = 2.52V @VGE = 15V, IC = 50A SUPER - 247 Parameter Max. Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM ILM Continuous Collector Current ÙPulse Collector Current d Clamped Inductive Load current VGE Gate-to-Emitter Voltage IF @ Tc = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. 1200 99 50 200 200 ±20 70 200 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) V W...