IRG4PSH71KD
IRG4PSH71KD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
- Hole-less clip/pressure mount package patible with TO-247 and TO-264, with reinforced pins
- High short circuit rating IGBTs, optimized for motorcontrol
- Minimum switching losses bined with low conduction losses
- Tightest parameter distribution
- IGBT co-packaged with ultrafast soft recovery antiparallel diode
- Creepage distance increased to 5.35mm
VCES = 1200V
VCE(on) typ. = 2.97V
@VGE = 15V, IC = 42A n-ch an nel
Benefits
- Highest current rating copack IGBT
- Maximum power density, twice the power handling of the TO-247, less space than TO-264
- HEXFREDTM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses
SUPER
- 247
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 78 42 156 156 42 156 10 ± 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
µs V W
°C
Thermal Resistance Mechanical
Parameter
RθJC RθJC RθCS RθJA Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Remended Clip Force Weight
Min.
- -
- -
- -
- -
- -
- - 20.0(2.0)
-...