IRG4PSH71U Datasheet | International Rectifier

Features - Ultra Fast switching speed optimized for operating frequencies 8 to 40k Hz in hard switching, 200k Hz in resonant mode soft switching - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations - Industry-benchmark Super-247 package with higher power handling capability pared to same footprint TO-247 - Creepage distance increased to 5.35mm Ultra Fast Speed IGBT VCES = 1200V VCE(on) typ. = 2.50V @VGE = 15V, IC = 50A n-channel Benefits - Generation 4 IGBT's offer highest efficiencies available - Maximum power density, twice the power handling of the TO-247, less space than TO-264 - IGBTs optimized for specific application conditions - Cost and space saving in designs that require multiple, paralleled IGBTs SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current Max. 1200 99 50 200 200 ±20 150 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) Units Ù Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy d Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. g V m J W °C Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Remended Clip Force Weight Min. - - - - - - - - - 20 (2.0) -...