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PD - 91685
IRG4PSH71U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm
C
UltraFast Speed IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.
IRG4PSH71U Datasheet
