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IRG4PSH71K - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins.
  • High short circuit rating IGBTs, optimized for motorcontrol.
  • Minimum switching losses combined with low conduction losses.
  • Tightest parameter distribution.
  • Creepage distance increased to 5.35mm VCES = 1200V G E VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A n-channel Benefits.
  • Highest current rating IGBT.
  • Maximum power density, twice the po.

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Datasheet Details

Part number IRG4PSH71K
Manufacturer International Rectifier
File Size 150.57 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription

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PD - 91687A PRELIMINARY IRG4PSH71K Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • Creepage distance increased to 5.35mm VCES = 1200V G E VCE(on) typ. = 2.
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