IRG7IC28UPBF
IRG7IC28UPBF is PDP TRENCH IGBT manufactured by International Rectifier.
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRG7IC28UPb F
Key Parameters
600 1.70 225 150 V V A °C
VCE min VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C TJ max c
E C G n-channel
G Gate C Collector
TO-220AB Full-Pak
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM rating per silicon area which improve panel trench IGBT technology to achieve low CE(on) V and low E PULSE efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
±30 25 12 225 40 16 0.32 -40 to + 150 300
Units
V A c
W W/°C °C
10lb in (1.1N m) x x
Thermal Resistance
RθJC RθJA Junction-to-Case Junction-to-Ambient d
Parameter
Typ.
- -
- -
- -
Max.
3.1 65
Units
°C/W d
.irf.
09/02/2010 http://..
IRG7IC28UPb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp....
