IRG7PG35U-EPbF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRG7PG35U-EPbF datasheet PDF. This datasheet also includes the IRG7PG35UPBF variant, as both parts are published together in a single manufacturer document.

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IRG7PG35U-EPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRG7PG35UPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRG7PG35U-EPbF
Manufacturer	International Rectifier (now Infineon)
File Size	411.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PG35U-EPbF Datasheet

Overview

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits.
 High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG7PG35UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PG42UD-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PG42UDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR