IRG7PG35UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRG7PG35UPBF
Manufacturer	International Rectifier
File Size	411.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PG35UPBF Datasheet
Additional preview pages of the IRG7PG35UPBF datasheet.

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits.
 High efficiency in a wide range of.

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Published: Feb 4, 2016 |