Datasheet4U.com

IRG7PG35UPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.

📥 Download Datasheet

IRG7PG35UPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG7PG35UPBF
Manufacturer	International Rectifier (now Infineon)
File Size	411.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG7PG35UPBF Download (PDF)

Key Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits.
 High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG7PG35U-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PG42UD-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PG42UDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR