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IRG7PH35U-EP, IRG7PH35UPBF Datasheet - International Rectifier

IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35U-EP Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH35UPBF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRG7PH35U-EP, IRG7PH35UPBF. Please refer to the document for exact specifications by model.
IRG7PH35U-EP Datasheet Preview Page 2 IRG7PH35U-EP Datasheet Preview Page 3

Datasheet Details

Part number:

IRG7PH35U-EP, IRG7PH35UPBF

Manufacturer:

International Rectifier

File Size:

397.82 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH35U-EP, IRG7PH35UPBF.
Please refer to the document for exact specifications by model.

IRG7PH35U-EP Distributor

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