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IRG7PH42UD1MPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-channel G Benefits.
  • Device optimized for induction heatin.

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Full PDF Text Transcription

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IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ. = 1.
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