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IRG7PK35UD1PbF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRG7PK35UD1PbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PK35UD1PbF

Datasheet Details

Part number	IRG7PK35UD1PbF
Manufacturer	International Rectifier
File Size	507.70 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRG7PK35UD1PbF Datasheet
Additional preview pages of the IRG7PK35UD1PbF datasheet.

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Features

Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching.

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Published: Aug 11, 2014 |