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IRGIB10B60KD1 Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGIB10B60KD1 datasheet preview

Datasheet Details

Part number	IRGIB10B60KD1
Manufacturer	International Rectifier (now Infineon)
File Size	412.53 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB10B60KD1_InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 10A, TC=100°C tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.

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