IRGIB10B60KD1 - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRGIB10B60KD1
Manufacturer	International Rectifier
File Size	412.53 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB10B60KD1 Datasheet
Additional preview pages of the IRGIB10B60KD1 datasheet.

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175°C G E C VCES = 600V IC = 10A, TC=100°C tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.

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Published: Jun 9, 2007 |