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PD - 94913
IRGIB10B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free
C
VCES = 600V IC = 10A, TC=100°C
G E
tsc > 10µs, TJ=150°C
n-channel
VCE(on) typ. = 1.7V
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
IRGIB10B60KD1PBF Datasheet
