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IRGIB6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGIB6B60KD

Datasheet Details

Part number	IRGIB6B60KD
Manufacturer	International Rectifier
File Size	299.48 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB6B60KD Datasheet
Additional preview pages of the IRGIB6B60KD datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sh.

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Published: Jun 9, 2007 |