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IRGIB6B60KD Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGIB6B60KD datasheet preview

Datasheet Details

Part number	IRGIB6B60KD
Manufacturer	International Rectifier (now Infineon)
File Size	299.48 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB6B60KD_InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sh.

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