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IRGIB6B60KD Datasheet, International Rectifier

IRGIB6B60KD transistor equivalent, insulated gate bipolar transistor.

IRGIB6B60KD Avg. rating / M : 1.0 rating-11

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IRGIB6B60KD Datasheet

Features and benefits


* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .

Image gallery

IRGIB6B60KD Page 1 IRGIB6B60KD Page 2 IRGIB6B60KD Page 3

TAGS

IRGIB6B60KD
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Manufacturer


International Rectifier

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