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IRGIB6B60KDPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGIB6B60KDPBF datasheet preview

Datasheet Details

Part number	IRGIB6B60KDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	280.27 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGIB6B60KDPBF_InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free. C VCES = 600V IC = 6.0A, TC=90°C G E tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.

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