IRGP4062D-EPbF
Overview
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA G
- 100% of the parts tested for ILM
- Positive VCE (ON) Temperature co-efficient
- Ultra fast soft Recovery Co-Pak Diode E n-channel
- Tight parameter distribution
- Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V CC Benefits
