IRGP4062D-EPbF Datasheet | International Rectifier

Features - Low VCE (ON) Trench IGBT Technology - Low switching losses - Maximum Junction temperature 175 °C - 5 μS short circuit SOA - Square RBSOA - 100% of the parts tested for ILM  - Positive VCE (ON) Temperature co-efficient - Ultra fast soft Recovery Co-Pak Diode E n-channel - Tight parameter distribution - Lead Free Package VCES = 600V IC = 24A, TC = 100°C t SC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Benefits - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation - Low EMI E GC TO-220AB IRGB4062DPb F G Gate E GC E GC TO-247AC TO-247AD IRGP4062DPb F IRGP4062D-EPb F C Collector E Emitter Absolute Maximum Ratings Pa ra m e te r V CES IC @ TC = 25°C IC @ TC = 100°C ICM IL M IF @ TC = 25°C IF @ TC = 100°C IFM V GE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current e Diode Maximum Forward...