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IRGP4062D-EPbF Datasheet, TRANSISTOR, International Rectifier

IRGP4062D-EPbF Datasheet, TRANSISTOR, International Rectifier

IRGP4062D-EPbF

datasheet Download (Size : 430.21KB)

IRGP4062D-EPbF Datasheet
IRGP4062D-EPbF

datasheet Download (Size : 430.21KB)

IRGP4062D-EPbF Datasheet

IRGP4062D-EPbF Features and benefits

IRGP4062D-EPbF Features and benefits

C
* Low VCE (ON) Trench IGBT Technology
* Low switching losses
* Maximum Junction temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA G <.

IRGP4062D-EPbF Application

IRGP4062D-EPbF Application


* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged trans.

IRGP4062D-EPbF Description

IRGP4062D-EPbF Description

INSULATED GATE BIPOLAR TRANSISTOR

Image gallery

IRGP4062D-EPbF Page 1 IRGP4062D-EPbF Page 2 IRGP4062D-EPbF Page 3

<?=IRGP4062D-EPbF?> Page 2 <?=?> Page 3

TAGS

IRGP4062D-EPbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Manufacturer


International Rectifier

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