IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGP4063DPBF
Manufacturer	International Rectifier ↗
File Size	345.77 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4063DPBF_InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 μS short circuit SOA.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode.
Tight parameter distribution.
Lead Free Package C G E n-channel VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.

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Published: Feb 15, 2007 |