• Part: IRGP4063DPBF
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: International Rectifier
  • Size: 345.77 KB
Download IRGP4063DPBF Datasheet PDF
IRGP4063DPBF page 2
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IRGP4063DPBF page 3
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IRGP4063DPBF Key Features

  • Low VCE (ON) Trench IGBT Technology
  • Low switching losses
  • Maximum Junction temperature 175 °C
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of the parts tested for 4X rated current (ILM)
  • Positive VCE (ON) Temperature co-efficient
  • Ultra fast soft Recovery Co-Pak Diode
  • Tight parameter distribution
  • Lead Free Package