IRGP4063PBF Key Features
- Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Squa
- Part: IRGP4063PBF
- Manufacturer: International Rectifier (official site)
- Size: 274.11 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRGP4063-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D1-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063D1PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4063DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
IRGP4063PBF Description
PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4063PBF Applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation