IRGP4066-EPBF Key Features
- Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Squa
IRGP4066-EPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
| Part Number | Description |
|---|---|
| IRGP4066D | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066D-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4062-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |