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IRGP4066D-EPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGP4066D-EPBF datasheet PDF. This datasheet also includes the IRGP4066DPBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4066DPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

  • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package C IRGP4066DPbF IRGP4066D-EPbF VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.70V Benefits.
  • High Efficie.