Datasheet Summary
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- 97317
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
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- - Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
VCES = 300V IC = 40A, TC = 100°C
VCE(on) typ. = 1.46V
Benefits
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Low EMI n-channel
Applications
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