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IRGP4072DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGP4072DPbF VCES = 300V IC = 40A, TC = 100°C G VCE(on) typ. = 1.46V E Benefits.
  • High Efficiency in a wide range of.

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www.DataSheet4U.com PD - 97317 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGP4072DPbF VCES = 300V IC = 40A, TC = 100°C G VCE(on) typ. = 1.
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