IRGP4790-EPbF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

Download the IRGP4790-EPbF datasheet PDF. This datasheet also includes the IRGP4790PBF variant, as both parts are published together in a single manufacturer document.

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IRGP4790-EPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGP4790PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGP4790-EPbF
Manufacturer	International Rectifier (now Infineon)
File Size	772.45 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4790-EPbF Datasheet

Overview

VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Collector E GC IRGP4790‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGP4790D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4790DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4790PBF	Insulated Gate Bipolar Transistor
IRGP4740D-EPbF	Insulated Gate Bipolar Transistor
IRGP4740DPbF	Insulated Gate Bipolar Transistor
IRGP4750D-EPbF	Insulated Gate Bipolar Transistor
IRGP4750DPbF	Insulated Gate Bipolar Transistor
IRGP4760-EPbF	Insulated Gate Bipolar Transistor
IRGP4760D-EPbF	Insulated Gate Bipolar Transistor
IRGP4760DPbF	Insulated Gate Bipolar Transistor