IRGP6630D-EPbF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) .
* Welding
* H Bridge Converters
G
E
n-channel
G Gate
E C G IRGP6630DPbF TO‐247AC
C Collector
GCE
IRGP6630.
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