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IRGP6630D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP6630D-EPbF, a member of the IRGP6630DPbF Insulated Gate Bipolar Transistor family.

Features

  • Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of.

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  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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