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IRGR3B60KD2PBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGR3B60KD2PBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGR3B60KD2PBF
Manufacturer	International Rectifier (now Infineon)
File Size	306.76 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGR3B60KD2PBF Datasheet

Overview

PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free Benefits.
Benchmark Efficiency for Motor Control. C G E n-channel.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A,.

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