Datasheet Summary
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C
E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF
VCE(on) typ. = 1.7V @ 6A n-channel
TO-220AB IRGB4610DPbF
Applications
- Appliance Drives
- Inverters
- UPS
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS pliant
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Benefits High efficiency in a wide range of applications and switching frequencies...