IRGR3B60KD2PBF Datasheet | International Rectifier

Features - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - Lead-Free Benefits - Benchmark Efficiency for Motor Control. G E n-channel - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.9V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current c ICM Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ Tc = 25°C Diode Continous Forward Current IF @ Tc = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature Range, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC Junction-to-Case- IGBT RθJC Junction-to-Case- Diode d RθJA Junction-to-Ambient, (PCB Mount) Wt Weight .irf. D-Pak...