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IRGR3B60KD2PBF - Insulated Gate Bipolar Transistor

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free Benefits.
  • Benchmark Efficiency for Motor Control. C G E n-channel.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A,.

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Full PDF Text Transcription

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PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. C G E n-channel • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.9V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current cICM Pulse Collector Current (Ref.Fig.C.T.
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