IRGR3B60KD2 - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRGR3B60KD2
Manufacturer	International Rectifier
File Size	282.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGR3B60KD2 Datasheet
Additional preview pages of the IRGR3B60KD2 datasheet.

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n.

📁 Similar Datasheet

Other Datasheets by International Rectifier

Published: Mar 31, 2014 |