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PD - 94601A
IRGR3B60KD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient.
VCES = 600V IC = 4.2A, TC=100°C
G E
tsc > 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 1.
IRGR3B60KD2 Datasheet
