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IRGR3B60KD2 Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGR3B60KD2 insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGR3B60KD2
Manufacturer	International Rectifier (now Infineon)
File Size	282.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGR3B60KD2 Download (PDF)

Overview

PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n.

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