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IRGR4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V IC 6.0A, TC = 100°C
Features
Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant
G E
Tjmax = 175°C
n-channel
C
VCE(on) typ. 1.
IRGR4045DPBF Datasheet
