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IRGR4045DPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGR4045DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGR4045DPBF

Datasheet Details

Part number	IRGR4045DPBF
Manufacturer	International Rectifier
File Size	339.40 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGR4045DPBF Datasheet
Additional preview pages of the IRGR4045DPBF datasheet.

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Features

Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant G E Tjmax = 175°C n-channel C VCE(on) typ.  1.7V E Benefits.
High Efficiency in a Wide Range of.

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Published: Mar 31, 2014 |