IRGR4045DPBF Datasheet | International Rectifier

Features Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, Ro HS pliant Tjmax = 175°C n-channel VCE(on) typ.  1.7V Benefits - High Efficiency in a Wide Range of Applications - Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses - Rugged Transient Performance for Increased Reliability - Excellent Current Sharing in Parallel Operation - Low EMI D-Pak IRGR4045DPb F G Gate C Colletor E Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Max. 600 12 6.0 18 24 8.0 4.0 24 ± 20 ± 30 77 39 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V c A d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds V W °C Thermal Resistance Parameter R JC R JC R JA R JA Junction-to-Case - IGBT Junction-to-Case - Diode e e Min. - - - Typ. - - - - - - -...