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IRGR4045DPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview

IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE           C VCES = 600V IC  6.

Key Features

  • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant G E Tjmax = 175°C n-channel C VCE(on) typ.  1.7V E Benefits.
  • High Efficiency in a Wide Range of.