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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDPbF
C VCES = 600V IC = 3.7A, TC = 100°C
G E
Features Low VCE (ON) Non Punch Through IGBT technology Low Diode VF 10µs Short Circuit Capability Square RBSOA Ultra-soft Diode Reverse Recovery Characteristics Positive VCE (ON) temperature co-efficient Lead-free Benefits Benchmark Efficiency for Motor Control Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI
TJ(MAX) = 150°C VCE(ON) typ. = 1.
IRGR2B60KDPBF Datasheet
