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IRGR2B60KDPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGR2B60KDPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGR2B60KDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	762.68 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGR2B60KDPBF Download (PDF)

Overview

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF C VCES = 600V IC = 3.

Key Features

 Low VCE (ON) Non Punch Through IGBT technology.
 Low Diode VF.
 10µs Short Circuit Capability.
 Square RBSOA.
 Ultra-soft Diode Reverse Recovery Characteristics.
 Positive VCE (ON) temperature co-efficient.
 Lead-free Benefits.
 Benchmark Efficiency for Motor Control.
 Rugged transient performance for increased reliability.
 Excellent current sharing in parallel operation.
 Low EMI TJ(MAX) = 150°C VCE(ON) typ. = 1.95V n-channel C E G.

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