Datasheet Summary
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
C VCES = 600V IC = 3.7A, TC = 100°C
Features
- Low VCE (ON) Non Punch Through IGBT technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- Ultra-soft Diode Reverse Recovery Characteristics
- Positive VCE (ON) temperature co-efficient
- Lead-free Benefits
- Benchmark Efficiency for Motor Control
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
- Low EMI
TJ(MAX) = 150°C VCE(ON) typ. = 1.95V n-channel
C
E G D-Pak G Gate C Collector E Emitter
Base part number IRGR2B60KDPbF
Package Type D-Pak
Standard Pack...