IRGR4045DPBF transistor equivalent, insulated gate bipolar transistor.
Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Te.
* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.
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