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IRGS4607DPBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGS4607DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS4607DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	821.57 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4607DPBF Datasheet

Overview

VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.75V @ IC = 4.

Key Features

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter  Benefits High Efficiency in a Wide Range of.

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